Product Summary

The MT5C1008CW25/883C 128K x 8 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. For design flexibility in high-speed memory applications, this device offers dual chip enables (CE1\, CE2) and output enable (OE\). These control pins of MT5C1008CW25/883C can place the outputs in High-Z for additional flexibility in system design. The MT5C1008CW25/883C operates from a single +5V power supply and all inputs and outputs are fully TTL compatible.

Parametrics

MT5C1008CW25/883C absolute maximum ratings: (1)Supply Voltage Range (Vcc): -0.5V to +6.0V; (2)Storage Temperature: -65℃ to +150℃; (3)Short Circuit Output Current (per I/O): 20mA; (4)Voltage on any Pin Relative to Vss: -0.5V to Vcc+1V; (5)Max Junction Temperature: +150℃; (6)Power Dissipation: 1W.

Features

MT5C1008CW25/883C features: (1)High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns; (2)Battery Backup: 2V data retention; (3)Low power standby; (4)High-performance, low-power CMOS process; (5)Single +5V (+10%) Power Supply; (6)Easy memory expansion with CE1\, CE2, and OE\options.; (7)All inputs and outputs are TTL compatible.

Diagrams

MT5C1008CW25/883C FUNCTIONAL BLOCK DIAGRAM

MT5C 1008
MT5C 1008

Other


Data Sheet

Negotiable 
MT5C1001
MT5C1001

Other


Data Sheet

Negotiable 
MT5C1008
MT5C1008

Other


Data Sheet

Negotiable 
MT5C1009
MT5C1009

Other


Data Sheet

Negotiable 
MT5C2564
MT5C2564

Other


Data Sheet

Negotiable 
MT5C2565
MT5C2565

Other


Data Sheet

Negotiable